bd707/709/711 bd708/712 complementary silicon power transistors n complementary pnp - npn devices application n linear and switching industrial equipment description the bd707, bd709 and BD711 are silicon epitaxial-base npn power transistors in jedec to-220 plastic package. they are intented for use in power linear and switching applications. the bd707 and BD711 complementary pnp types are bd708 and bd712 respectively. ? internal schematic diagram september 1999 1 2 3 to-220 absolute maximum ratings symbol parameter value unit npn bd707 bd709 BD711 pnp bd708 bd712 v cbo collector-base voltage (i e = 0) 60 80 100 v v cer collector-emitter voltage (v be = 0) 60 80 100 v v ceo collector-emitter voltage (i b = 0) 60 80 100 v v ebo emitter-base voltage (i c = 0) 5 v i c collector current 12 a i cm collector peak current 18 a i b base current 5 a p tot total dissipation at t c 25 o c 75 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c for pnp types voltage and current values are negative 1/6
thermal data r thj-case r thj-case thermal resistance junction-case max thermal resistance junction-ambient max 1.67 70 o c/w o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) for bd707/708 v cb = 60 v for bd709 v cb = 80 v for BD711/712 v cb = 100 v t case = 150 o c for bd707/708 v cb = 60 v for bd709 v cb = 80 v for BD711/712 v cb = 100 v 100 100 100 1 1 1 m a m a m a ma ma ma i ceo collector cut-off current (i b = 0) for bd707/708 v ce = 30 v for bd709 v ce = 40 v for BD711/712 v ce = 50 v 100 100 100 ma ma ma i ebo emitter cut-off current (i c = 0) v eb = 5 v 1 ma v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 100 ma for bd707/708 for bd709 for BD711/712 60 80 100 v v v v ce(sat) * collector-emitter saturation voltage i c = 4 a i b = 0.4 a 1 v v cek * knee voltage i c = 3 a i b = ** 0.4 v v be * base-emitter voltage i c = 4 a v ce = 4 v 1.5 v h fe * dc current gain i c = 0.5 a v ce = 2 v i c = 2 a v ce = 2 v for bd707/708 for bd709 i c = 4 a v ce = 4 v i c = 10 a v ce = 4 v for bd707/708 for bd709 for BD711/712 40 30 30 15 5 120 10 8 8 400 150 f t transition frequency i c = 300 ma v ce = 3 v 3 mhz * pulsed: pulse duration = 300 m s, duty cycle 1.5 % ** value for which i c = 3.3 a at v ce = 2v. for pnp types voltage and current values are negative. bd707/708/709/711/712 2/6
safe operating areas dc current gain(npn type) dc transconductance(npn type) derating curve dc current gain(pnp type) dc transconductance(pnp type) bd707/708/709/711/712 3/6
collector-emitter saturation voltage (npn type) collector-emitter saturation voltage (pnp type) base-emitter saturation voltage (npn type) base-emitter saturation voltage (pnp type) transition frequency (npn type) transition frequency (pnp type) bd707/708/709/711/712 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 p011c to-220 mechanical data bd707/708/709/711/712 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com . bd707/708/709/711/712 6/6
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